Technische Details APT21M100J Microsemi
Category: Transistor modules MOSFET, Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 462W, Type of module: MOSFET transistor, Semiconductor structure: single transistor, Drain-source voltage: 1kV, Drain current: 13A, Case: ISOTOP, Electrical mounting: screw, Polarisation: unipolar, On-state resistance: 0.38Ω, Pulsed drain current: 120A, Power dissipation: 462W, Technology: POWER MOS 8®, Kind of channel: enhanced, Gate-source voltage: ±30V, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT21M100J
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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APT21M100J | Hersteller : Microchip Technology | Description: MOSFET N-CH 1000V 21A ISOTOP |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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APT21M100J | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 462W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 13A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.38Ω Pulsed drain current: 120A Power dissipation: 462W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT21M100J | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 13A; ISOTOP; screw; Idm: 120A; 462W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 13A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.38Ω Pulsed drain current: 120A Power dissipation: 462W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |