APT22F120B2 Microchip Technology
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Technische Details APT22F120B2 Microchip Technology
Description: MOSFET N-CH 1200V 23A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 700mOhm @ 12A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8370 pF @ 25 V.
Weitere Produktangebote APT22F120B2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APT22F120B2 | Hersteller : MICROCHIP TECHNOLOGY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; Idm: 90A; 1.04kW Type of transistor: N-MOSFET Technology: POWER MOS 8® Case: TO247MAX Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 260nC On-state resistance: 0.7Ω Drain current: 15A Gate-source voltage: ±30V Pulsed drain current: 90A Power dissipation: 1.04kW Drain-source voltage: 1.2kV Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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APT22F120B2 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1200V 23A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 12A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8370 pF @ 25 V |
Produkt ist nicht verfügbar |
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| APT22F120B2 | Hersteller : Microchip Technology |
MOSFET Modules FREDFET MOS8 1200 V 22 A TO-247 MAX |
Produkt ist nicht verfügbar |
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| APT22F120B2 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 15A; Idm: 90A; 1.04kW Type of transistor: N-MOSFET Technology: POWER MOS 8® Case: TO247MAX Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 260nC On-state resistance: 0.7Ω Drain current: 15A Gate-source voltage: ±30V Pulsed drain current: 90A Power dissipation: 1.04kW Drain-source voltage: 1.2kV Kind of channel: enhancement |
Produkt ist nicht verfügbar |