APT25GP120BG Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT 1200V 69A 417W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/70ns
Switching Energy: 500µJ (on), 438µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 69 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 417 W
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 17.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APT25GP120BG Microchip Technology
Description: IGBT 1200V 69A 417W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 12ns/70ns, Switching Energy: 500µJ (on), 438µJ (off), Test Condition: 600V, 25A, 5Ohm, 15V, Gate Charge: 110 nC, Current - Collector (Ic) (Max): 69 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 417 W.
Weitere Produktangebote APT25GP120BG nach Preis ab 17.13 EUR bis 18.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
APT25GP120BG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Collector current: 33A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 197ns Gate-emitter voltage: ±20V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 90A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||
|
|
APT25GP120BG | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3 Case: TO247-3 Power dissipation: 417W Technology: POWER MOS 7®; PT Gate charge: 110nC Kind of package: tube Collector current: 33A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 197ns Gate-emitter voltage: ±20V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 90A |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
| APT25GP120BG | Hersteller : Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, 25A, TO-247, RoHS |
Produkt ist nicht verfügbar |