
APT25GP120BG MICROCHIP TECHNOLOGY

Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 26ns
Gate charge: 110nC
Turn-off time: 197ns
Collector current: 33A
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Power dissipation: 417W
Collector-emitter voltage: 1.2kV
Technology: POWER MOS 7®; PT
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
5+ | 16.8 EUR |
10+ | 16.22 EUR |
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Technische Details APT25GP120BG MICROCHIP TECHNOLOGY
Description: IGBT PT 1200V 69A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 12ns/70ns, Switching Energy: 500µJ (on), 438µJ (off), Test Condition: 600V, 25A, 5Ohm, 15V, Gate Charge: 110 nC, Current - Collector (Ic) (Max): 69 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 417 W.
Weitere Produktangebote APT25GP120BG nach Preis ab 16.22 EUR bis 17.9 EUR
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APT25GP120BG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: IGBT; PT; 1.2kV; 33A; 417W; TO247-3 Mounting: THT Case: TO247-3 Kind of package: tube Turn-on time: 26ns Gate charge: 110nC Turn-off time: 197ns Collector current: 33A Gate-emitter voltage: ±20V Pulsed collector current: 90A Power dissipation: 417W Collector-emitter voltage: 1.2kV Technology: POWER MOS 7®; PT Type of transistor: IGBT |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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APT25GP120BG | Hersteller : Microchip Technology |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 12ns/70ns Switching Energy: 500µJ (on), 438µJ (off) Test Condition: 600V, 25A, 5Ohm, 15V Gate Charge: 110 nC Current - Collector (Ic) (Max): 69 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 90 A Power - Max: 417 W |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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APT25GP120BG | Hersteller : Microchip Technology |
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