APT25GP90BDQ1G Microchip Technology
Hersteller: Microchip Technology
Description: IGBT PT 900V 72A TO247
Power - Max: 417 W
Current - Collector Pulsed (Icm): 110 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector (Ic) (Max): 72 A
Gate Charge: 110 nC
Test Condition: 600V, 40A, 4.3Ohm, 15V
Switching Energy: 370µJ (off)
Td (on/off) @ 25°C: 13ns/55ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details APT25GP90BDQ1G Microchip Technology
Description: IGBT PT 900V 72A TO247, Power - Max: 417 W, Current - Collector Pulsed (Icm): 110 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector (Ic) (Max): 72 A, Gate Charge: 110 nC, Test Condition: 600V, 40A, 4.3Ohm, 15V, Switching Energy: 370µJ (off), Td (on/off) @ 25°C: 13ns/55ns, IGBT Type: PT, Supplier Device Package: TO-247 [B], Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 25A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote APT25GP90BDQ1G nach Preis ab 14.22 EUR bis 16.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT25GP90BDQ1G | Microchip Technology |
IGBTs IGBT PT MOS 7 Combi 900 V 25 A TO-247 |
auf Bestellung 106 Stücke: Lieferzeit 10-14 Tag (e) |
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| APT25GP90BDQ1G |
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Hersteller: Microchip Technology
IGBTs IGBT PT MOS 7 Combi 900 V 25 A TO-247
IGBTs IGBT PT MOS 7 Combi 900 V 25 A TO-247
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.56 EUR |
| 10+ | 16.54 EUR |
| 25+ | 14.53 EUR |
| 100+ | 14.22 EUR |