APT25GR120B Microchip Technology
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.03 EUR |
| 100+ | 7.81 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APT25GR120B Microchip Technology
Description: IGBT NPT 1200V 75A TO247, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A, Supplier Device Package: TO-247, IGBT Type: NPT, Td (on/off) @ 25°C: 16ns/122ns, Switching Energy: 742µJ (on), 427µJ (off), Test Condition: 600V, 25A, 4.3Ohm, 15V, Gate Charge: 203 nC, Part Status: Active, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 521 W.
Weitere Produktangebote APT25GR120B nach Preis ab 7.52 EUR bis 9.26 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
APT25GR120B | Hersteller : Microchip Technology |
 Description: IGBT NPT 1200V 75A TO247Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Supplier Device Package: TO-247 IGBT Type: NPT Td (on/off) @ 25°C: 16ns/122ns Switching Energy: 742µJ (on), 427µJ (off) Test Condition: 600V, 25A, 4.3Ohm, 15V Gate Charge: 203 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 521 W |
auf Bestellung 118 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
 |
APT25GR120B | Hersteller : Microchip Technology |
Trans IGBT Chip N-CH 1200V 75A 521W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||
 |
APT25GR120B | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 100A Turn-on time: 26ns Turn-off time: 164ns Type of transistor: IGBT Power dissipation: 521W Kind of package: tube Gate charge: 154nC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Mounting: THT Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||
|
|
APT25GR120B | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 25A Pulsed collector current: 100A Turn-on time: 26ns Turn-off time: 164ns Type of transistor: IGBT Power dissipation: 521W Kind of package: tube Gate charge: 154nC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Mounting: THT Case: TO247-3 |
Produkt ist nicht verfügbar |