APT25GR120BD15 Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT NPT 1200V 75A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 16ns/122ns
Switching Energy: 742µJ (on), 427µJ (off)
Test Condition: 600V, 25A, 4.3Ohm, 15V
Gate Charge: 203 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 521 W
auf Bestellung 89 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 11.3 EUR |
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Technische Details APT25GR120BD15 Microchip Technology
Description: IGBT NPT 1200V 75A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A, Supplier Device Package: TO-247, IGBT Type: NPT, Td (on/off) @ 25°C: 16ns/122ns, Switching Energy: 742µJ (on), 427µJ (off), Test Condition: 600V, 25A, 4.3Ohm, 15V, Gate Charge: 203 nC, Part Status: Active, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 521 W.
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APT25GR120BD15 | Hersteller : Microchip Technology |
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APT25GR120BD15 | Hersteller : Microchip Technology |
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Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3 Case: TO247-3 Power dissipation: 521W Technology: NPT; POWER MOS 8® Gate charge: 154nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 25A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 164ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 100A Anzahl je Verpackung: 1 Stücke |
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APT25GR120BD15 | Hersteller : Microchip Technology |
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APT25GR120BD15 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 25A; 521W; TO247-3 Case: TO247-3 Power dissipation: 521W Technology: NPT; POWER MOS 8® Gate charge: 154nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 25A Type of transistor: IGBT Turn-on time: 26ns Turn-off time: 164ns Gate-emitter voltage: ±30V Mounting: THT Collector-emitter voltage: 1.2kV Pulsed collector current: 100A |
Produkt ist nicht verfügbar |