APT25GR120BSCD10 Microsemi Corporation
Hersteller: Microsemi Corporation
Description: IGBT 1200V 75A 521W TO247
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 521 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Gate Charge: 203 nC
Test Condition: 600V, 25A, 4.3Ohm, 15V
Switching Energy: 434µJ (on), 466µJ (off)
Td (on/off) @ 25°C: 16ns/122ns
IGBT Type: NPT
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Technische Details APT25GR120BSCD10 Microsemi Corporation
Description: IGBT 1200V 75A 521W TO247, Supplier Device Package: TO-247, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 521 W, Current - Collector Pulsed (Icm): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 75 A, Gate Charge: 203 nC, Test Condition: 600V, 25A, 4.3Ohm, 15V, Switching Energy: 434µJ (on), 466µJ (off), Td (on/off) @ 25°C: 16ns/122ns, IGBT Type: NPT.