APT25M100J Microchip Technology
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Technische Details APT25M100J Microchip Technology
Description: MOSFET N-CH 1000V 25A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V, Power Dissipation (Max): 545W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: ISOTOP®, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V.
Weitere Produktangebote APT25M100J
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT25M100J | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 1KV 25A 4-Pin SOT-227 Tube |
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| APT25M100J | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 16A; ISOTOP; screw; Idm: 140A; 545W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 16A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.33Ω Pulsed drain current: 140A Power dissipation: 545W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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APT25M100J | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1000V 25A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V Power Dissipation (Max): 545W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: ISOTOP® Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT25M100J | Hersteller : Microchip Technology |
Discrete Semiconductor Modules FG, MOSFET, 1000V, SOT-227 |
Produkt ist nicht verfügbar |
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| APT25M100J | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 16A; ISOTOP; screw; Idm: 140A; 545W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 16A Case: ISOTOP Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.33Ω Pulsed drain current: 140A Power dissipation: 545W Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |