APT26M100JCU3 MICROCHIP (MICROSEMI)

Description: MOSFET N-CH 1000V 26A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V, Power Dissipation (Max): 543W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SOT-227, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V.