
APT29F100B2 Microchip Technology
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 31.06 EUR |
10+ | 30.96 EUR |
25+ | 29.34 EUR |
100+ | 26.24 EUR |
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Technische Details APT29F100B2 Microchip Technology
Description: MOSFET N-CH 1000V 30A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 16A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V.
Weitere Produktangebote APT29F100B2 nach Preis ab 31.15 EUR bis 31.15 EUR
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APT29F100B2 | Hersteller : Microchip Technology |
![]() Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 16A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V |
auf Bestellung 49 Stücke: Lieferzeit 10-14 Tag (e) |
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APT29F100B2 | Hersteller : Microchip / Microsemi |
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auf Bestellung 126 Stücke: Lieferzeit 10-14 Tag (e) |
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APT29F100B2 | Hersteller : MICROCHIP TECHNOLOGY |
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