Technische Details APT30GN60BDQ2G Microchip Technology
Description: IGBT TRENCH FS 600V 63A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A, Supplier Device Package: TO-247 [B], IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/155ns, Switching Energy: 525µJ (on), 700µJ (off), Test Condition: 400V, 30A, 4.3Ohm, 15V, Gate Charge: 165 nC, Current - Collector (Ic) (Max): 63 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 203 W.
Weitere Produktangebote APT30GN60BDQ2G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| APT30GN60BDQ2G | MICROSEMI |
TO247/INSULATED GATE BIPOLAR TRANSISTOR FIELDSTOP LOW FREQ COMBI APT30GN60Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
|
APT30GN60BDQ2G | Microchip Technology |
Description: IGBT TRENCH FS 600V 63A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/155ns Switching Energy: 525µJ (on), 700µJ (off) Test Condition: 400V, 30A, 4.3Ohm, 15V Gate Charge: 165 nC Current - Collector (Ic) (Max): 63 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 203 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 120 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT30GN60BDQ2G |
![]() |
Hersteller: MICROSEMI
TO247/INSULATED GATE BIPOLAR TRANSISTOR FIELDSTOP LOW FREQ COMBI APT30GN60
Anzahl je Verpackung: 1 Stücke
TO247/INSULATED GATE BIPOLAR TRANSISTOR FIELDSTOP LOW FREQ COMBI APT30GN60
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT30GN60BDQ2G |
![]() |
Hersteller: Microchip Technology
Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
Description: IGBT TRENCH FS 600V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/155ns
Switching Energy: 525µJ (on), 700µJ (off)
Test Condition: 400V, 30A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 203 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 120 Stücke
Im Einkaufswagen
Stück im Wert von UAH


