APT30N60BC6 MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 9.87 EUR |
10+ | 9.77 EUR |
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Produktbewertung abgeben
Technische Details APT30N60BC6 MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 600V 30A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V, Power Dissipation (Max): 219W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 960µA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V.
Weitere Produktangebote APT30N60BC6 nach Preis ab 9.77 EUR bis 13.62 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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APT30N60BC6 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 89A Power dissipation: 219W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Gate charge: 88nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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APT30N60BC6 | Hersteller : Microchip Technology | MOSFET MOSFET COOLMOS 600 V 30 A TO-247 |
auf Bestellung 6 Stücke: Lieferzeit 14-28 Tag (e) |
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APT30N60BC6 | Hersteller : Microchip Technology | Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT30N60BC6 | Hersteller : Microchip Technology | Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT30N60BC6 | Hersteller : MICROSEMI |
TO-247/30 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET APT30N60 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT30N60BC6 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 600V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Power Dissipation (Max): 219W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 960µA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V |
Produkt ist nicht verfügbar |