APT30N60BC6 MICROSEMI
Hersteller: MICROSEMI
TO-247/30 A, 600 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET APT30N60
Anzahl je Verpackung: 1 Stücke
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Technische Details APT30N60BC6 MICROSEMI
Description: MOSFET N-CH 600V 30A TO247, Package / Case: TO-247-3, Packaging: Tube, Part Status: Active, Supplier Device Package: TO-247 [B], Vgs(th) (Max) @ Id: 3.5V @ 960µA, Power Dissipation (Max): 219W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Weitere Produktangebote APT30N60BC6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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APT30N60BC6 | Microchip Technology |
Description: MOSFET N-CH 600V 30A TO247 Package / Case: TO-247-3 Packaging: Tube Part Status: Active Supplier Device Package: TO-247 [B] Vgs(th) (Max) @ Id: 3.5V @ 960µA Power Dissipation (Max): 219W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT30N60BC6 | Microchip Technology |
MOSFETs MOSFET Superjunction 600 V 30 A TO-247 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT30N60BC6 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 30A TO247
Package / Case: TO-247-3
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 600V 30A TO247
Package / Case: TO-247-3
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Power Dissipation (Max): 219W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT30N60BC6 |
|
Hersteller: Microchip Technology
MOSFETs MOSFET Superjunction 600 V 30 A TO-247
MOSFETs MOSFET Superjunction 600 V 30 A TO-247
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH