Technische Details APT31M100B2 Microsemi
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW, Case: TO247MAX, Kind of package: tube, Technology: POWER MOS 8®, Polarisation: unipolar, Gate charge: 260nC, On-state resistance: 0.38Ω, Drain current: 20A, Pulsed drain current: 120A, Gate-source voltage: ±30V, Power dissipation: 1.04kW, Drain-source voltage: 1kV, Kind of channel: enhancement, Mounting: THT, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT31M100B2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| APT31M100B2 | Hersteller : MICROCHIP TECHNOLOGY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW Case: TO247MAX Kind of package: tube Technology: POWER MOS 8® Polarisation: unipolar Gate charge: 260nC On-state resistance: 0.38Ω Drain current: 20A Pulsed drain current: 120A Gate-source voltage: ±30V Power dissipation: 1.04kW Drain-source voltage: 1kV Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT31M100B2 | Hersteller : Microsemi Power Products Group |
Description: MOSFET N-CH 1000V 32A T-MAX |
Produkt ist nicht verfügbar |
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| APT31M100B2 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW Case: TO247MAX Kind of package: tube Technology: POWER MOS 8® Polarisation: unipolar Gate charge: 260nC On-state resistance: 0.38Ω Drain current: 20A Pulsed drain current: 120A Gate-source voltage: ±30V Power dissipation: 1.04kW Drain-source voltage: 1kV Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |