APT35GP120J MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 29A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 140A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.5 EUR |
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Technische Details APT35GP120J MICROCHIP (MICROSEMI)
Description: IGBT MOD 1200V 64A 284W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 64 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 284 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V.
Weitere Produktangebote APT35GP120J nach Preis ab 71.5 EUR bis 71.5 EUR
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APT35GP120J | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 29A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 29A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 140A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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APT35GP120J | Hersteller : Microchip Technology |
Trans IGBT Module N-CH 1200V 64A 284000mW |
Produkt ist nicht verfügbar |
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APT35GP120J | Hersteller : Microchip Technology |
Description: IGBT MOD 1200V 64A 284W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 284 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APT35GP120J | Hersteller : Microchip Technology |
IGBT Transistors FG, IGBT, 1200V, 35A, SOT-227 |
Produkt ist nicht verfügbar |