APT35GP120JDQ2 Microsemi
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Technische Details APT35GP120JDQ2 Microsemi
Description: IGBT MOD 1200V 64A 284W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 64 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 284 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V.
Weitere Produktangebote APT35GP120JDQ2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APT35GP120JDQ2 | Hersteller : MICROCHIP (MICROSEMI) |
 Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 26A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 26A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 140A Technology: POWER MOS 7®; PT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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APT35GP120JDQ2 | Hersteller : Microchip Technology |
Trans IGBT Module N-CH 1200V 64A 284000mW |
Produkt ist nicht verfügbar |
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APT35GP120JDQ2 | Hersteller : Microchip Technology |
Description: IGBT MOD 1200V 64A 284W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 284 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APT35GP120JDQ2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 26A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 26A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 140A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
Produkt ist nicht verfügbar |