APT35GP120JDQ2 Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT MOD 1200V 64A 284W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 284 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 67.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APT35GP120JDQ2 Microchip Technology
Description: IGBT MOD 1200V 64A 284W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 64 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 284 W, Current - Collector Cutoff (Max): 350 µA, Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V.
Weitere Produktangebote APT35GP120JDQ2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| APT35GP120JDQ2 | Hersteller : Microsemi |
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
||
| APT35GP120JDQ2 | Hersteller : MICROCHIP TECHNOLOGY |
APT35GP120JDQ2 IGBT modules |
Produkt ist nicht verfügbar |
||
 |
APT35GP120JDQ2 | Hersteller : Microchip Technology |
Trans IGBT Module N-CH 1200V 64A 284000mW |
Produkt ist nicht verfügbar |