APT35GP120JDQ2 Microchip Technology
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 64A 284W ISOTOP
Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V
Current - Collector Cutoff (Max): 350 µA
Power - Max: 284 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 64 A
Part Status: Active
IGBT Type: PT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Packaging: Tube
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Technische Details APT35GP120JDQ2 Microchip Technology
Description: IGBT MOD 1200V 64A 284W ISOTOP, Input Capacitance (Cies) @ Vce: 3.24 nF @ 25 V, Current - Collector Cutoff (Max): 350 µA, Power - Max: 284 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 64 A, Part Status: Active, IGBT Type: PT, Supplier Device Package: ISOTOP®, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 35A, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: ISOTOP, Packaging: Tube.
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| APT35GP120JDQ2 | Microsemi |
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Hersteller: Microsemi
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)