APT35SM70B Microsemi Corporation
Hersteller: Microsemi Corporation
Description: SICFET N-CH 700V 35A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 700 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 20V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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Technische Details APT35SM70B Microsemi Corporation
Description: SICFET N-CH 700V 35A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 700 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V, Drain to Source Voltage (Vdss): 700 V, Vgs (Max): +25V, -10V, Drive Voltage (Max Rds On, Min Rds On): 20V, Part Status: Obsolete, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 176W (Tc), Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 20V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.