APT37F50B Microchip Technology


APT100F50J_C.pdf
Hersteller: Microchip Technology
MOSFETs FREDFET MOS 8 500 V 37 A TO-247
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Lieferzeit 10-14 Tag (e)
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Technische Details APT37F50B Microchip Technology

Description: MOSFET N-CH 500V 37A TO247, Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247 [B], Vgs(th) (Max) @ Id: 5V @ 1mA, Power Dissipation (Max): 520W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.

Weitere Produktangebote APT37F50B nach Preis ab 12.02 EUR bis 12.02 EUR

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APT37F50B APT37F50B Microchip Technology 6980-apt37f50b-apt37f50s-datasheet Description: MOSFET N-CH 500V 37A TO247
Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.02 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
APT37F50B 6980-apt37f50b-apt37f50s-datasheet
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 37A TO247
Input Capacitance (Ciss) (Max) @ Vds: 5710 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.02 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH