APT38F80B2 MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: POWER MOS 8®
Pulsed drain current: 150A
Gate charge: 260nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 23.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APT38F80B2 MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 800V 41A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V.
Weitere Produktangebote APT38F80B2 nach Preis ab 21.44 EUR bis 38.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
APT38F80B2 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 26A; Idm: 150A; 1.04kW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 26A Power dissipation: 1.04kW Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: POWER MOS 8® Pulsed drain current: 150A Gate charge: 260nC |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
 |
APT38F80B2 | Hersteller : Microchip Technology |
MOSFETs FREDFET MOS8 800 V 38 A TO-247 MAX |
auf Bestellung 154 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
APT38F80B2 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 800V 41A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V |
auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
APT38F80B2 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 800V 41A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||
|
APT38F80B2 Produktcode: 125002
zu Favoriten hinzufügen
Lieblingsprodukt
|
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
|||||||||||
 |
APT38F80B2 | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 800V 41A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||
| APT38F80B2 | Hersteller : MICROSEMI |
TO247/41 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET APT38F80 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |