Weitere Produktangebote APT38F80B2 nach Preis ab 21.44 EUR bis 25.43 EUR
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APT38F80B2 | Microchip Technology |
 MOSFETs FREDFET MOS8 800 V 38 A TO-247 MAX |
auf Bestellung 154 Stücke: Lieferzeit 10-14 Tag (e) |
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APT38F80B2 | Microchip Technology |
Description: MOSFET N-CH 800V 41A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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| APT38F80B2 |
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Hersteller: Microchip Technology
MOSFETs FREDFET MOS8 800 V 38 A TO-247 MAX
MOSFETs FREDFET MOS8 800 V 38 A TO-247 MAX
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.06 EUR |
| 25+ | 22.58 EUR |
| 100+ | 21.44 EUR |
| APT38F80B2 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 41A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
Description: MOSFET N-CH 800V 41A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 20A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.43 EUR |