APT38N60BC6 Microchip Technology
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.88 EUR |
| 100+ | 9.38 EUR |
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Technische Details APT38N60BC6 Microchip Technology
Description: MOSFET N-CH 600V 38A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.2mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V.
Weitere Produktangebote APT38N60BC6
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT38N60BC6 | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 600V 38A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT38N60BC6 | Hersteller : Microchip Technology |
Trans MOSFET N-CH 600V 38A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT38N60BC6 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 112A Power dissipation: 278W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Gate charge: 112nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT38N60BC6 | Hersteller : MICROSEMI |
TO-247/38 A, 600 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET APT38N60 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT38N60BC6 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 600V 38A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2826 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT38N60BC6 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 112A Power dissipation: 278W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Gate charge: 112nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |