APT40GP60BG MICROSEMI
Hersteller: MICROSEMI
TO247/INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE APT40GP60
Anzahl je Verpackung: 1 Stücke
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Technische Details APT40GP60BG MICROSEMI
Description: IGBT PT 600V 100A TO247, Power - Max: 543 W, Current - Collector Pulsed (Icm): 160 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 100 A, Part Status: Active, Gate Charge: 135 nC, Test Condition: 400V, 40A, 5Ohm, 15V, Switching Energy: 385µJ (on), 352µJ (off), Td (on/off) @ 25°C: 20ns/64ns, IGBT Type: PT, Supplier Device Package: TO-247 [B], Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote APT40GP60BG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
APT40GP60BG | Microchip Technology |
Description: IGBT PT 600V 100A TO247 Power - Max: 543 W Current - Collector Pulsed (Icm): 160 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Part Status: Active Gate Charge: 135 nC Test Condition: 400V, 40A, 5Ohm, 15V Switching Energy: 385µJ (on), 352µJ (off) Td (on/off) @ 25°C: 20ns/64ns IGBT Type: PT Supplier Device Package: TO-247 [B] Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT40GP60BG | Microchip Technology |
IGBTs IGBT PT MOS 7 Single 600 V 40 A TO-247 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT40GP60BG |
|
Hersteller: Microchip Technology
Description: IGBT PT 600V 100A TO247
Power - Max: 543 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 135 nC
Test Condition: 400V, 40A, 5Ohm, 15V
Switching Energy: 385µJ (on), 352µJ (off)
Td (on/off) @ 25°C: 20ns/64ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT PT 600V 100A TO247
Power - Max: 543 W
Current - Collector Pulsed (Icm): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 135 nC
Test Condition: 400V, 40A, 5Ohm, 15V
Switching Energy: 385µJ (on), 352µJ (off)
Td (on/off) @ 25°C: 20ns/64ns
IGBT Type: PT
Supplier Device Package: TO-247 [B]
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| APT40GP60BG |
|
Hersteller: Microchip Technology
IGBTs IGBT PT MOS 7 Single 600 V 40 A TO-247
IGBTs IGBT PT MOS 7 Single 600 V 40 A TO-247
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH