APT40GP60JDQ2 MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B; tube
Technology: POWER MOS 7®; PT
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Max. off-state voltage: 0.6kV
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Case: SOT227B
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Anzahl je Verpackung: 1 Stücke
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Technische Details APT40GP60JDQ2 MICROCHIP TECHNOLOGY
Description: IGBT MODULE 600V 86A 284W ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 86 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 284 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 4.61 nF @ 25 V.
Weitere Produktangebote APT40GP60JDQ2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT40GP60JDQ2 | Hersteller : Microchip Technology |
Description: IGBT MODULE 600V 86A 284W ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 86 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 284 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 4.61 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APT40GP60JDQ2 | Hersteller : Microchip Technology |
IGBT Modules IGBT PT MOS 7 Combi 600 V 40 A SOT-227 |
Produkt ist nicht verfügbar |
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| APT40GP60JDQ2 | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B; tube Technology: POWER MOS 7®; PT Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 160A Max. off-state voltage: 0.6kV Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Case: SOT227B Semiconductor structure: single transistor Type of semiconductor module: IGBT |
Produkt ist nicht verfügbar |