APT40GP90BG Microsemi
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Technische Details APT40GP90BG Microsemi
Description: IGBT PT 900V 100A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 16ns/75ns, Switching Energy: 825µJ (off), Test Condition: 600V, 40A, 5Ohm, 15V, Gate Charge: 145 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 543 W.
Weitere Produktangebote APT40GP90BG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APT40GP90BG | Hersteller : MICROCHIP (MICROSEMI) |
 APT40GP90BG THT IGBT transistors |
Produkt ist nicht verfügbar |
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APT40GP90BG | Hersteller : Microchip Technology |
Description: IGBT PT 900V 100A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 16ns/75ns Switching Energy: 825µJ (off) Test Condition: 600V, 40A, 5Ohm, 15V Gate Charge: 145 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 160 A Power - Max: 543 W |
Produkt ist nicht verfügbar |