APT40GR120B Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT NPT 1200V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/163ns
Switching Energy: 1.38mJ (on), 906µJ (off)
Test Condition: 600V, 40A, 4.3Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.44 EUR |
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Technische Details APT40GR120B Microchip Technology
Description: IGBT NPT 1200V 88A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: NPT, Td (on/off) @ 25°C: 22ns/163ns, Switching Energy: 1.38mJ (on), 906µJ (off), Test Condition: 600V, 40A, 4.3Ohm, 15V, Gate Charge: 210 nC, Part Status: Active, Current - Collector (Ic) (Max): 88 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 500 W.
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Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 160A Turn-on time: 47ns Turn-off time: 232ns Type of transistor: IGBT Power dissipation: 500W Kind of package: tube Gate charge: 0.21µC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Mounting: THT Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
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| APT40GR120B | Hersteller : Microchip Technology |
IGBT Transistors IGBT MOS 8 1200 V 40 A TO-247 |
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APT40GR120B | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 160A Turn-on time: 47ns Turn-off time: 232ns Type of transistor: IGBT Power dissipation: 500W Kind of package: tube Gate charge: 0.21µC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Mounting: THT Case: TO247-3 |
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