Technische Details APT41M80L MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 800V 43A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-264 [L], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V.
Weitere Produktangebote APT41M80L
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APT41M80L | Hersteller : Microchip Technology |
 Trans MOSFET N-CH Si 800V 43A 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
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APT41M80L | Hersteller : Microchip Technology |
Description: MOSFET N-CH 800V 43A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 20A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 [L] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8070 pF @ 25 V |
Produkt ist nicht verfügbar |
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| APT41M80L | Hersteller : Microchip Technology |
MOSFET Modules MOSFET MOS8 800 V 41 A TO-264 |
Produkt ist nicht verfügbar |