APT43GA90B MICROCHIP (MICROSEMI)


123659-apt43ga90b-apt43ga90s-datasheet Hersteller: MICROCHIP (MICROSEMI)
APT43GA90B THT IGBT transistors
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Technische Details APT43GA90B MICROCHIP (MICROSEMI)

Description: IGBT 900V 78A 337W TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 12ns/82ns, Switching Energy: 875µJ (on), 425µJ (off), Test Condition: 600V, 25A, 4.7Ohm, 15V, Gate Charge: 116 nC, Part Status: Active, Current - Collector (Ic) (Max): 78 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 129 A, Power - Max: 337 W.

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APT43GA90B APT43GA90B Hersteller : Microchip Technology apt43ga90b_s_d.pdf Trans IGBT Chip N-CH 900V 78A 337mW 3-Pin(3+Tab) TO-247 Tube
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APT43GA90B APT43GA90B Hersteller : Microchip Technology 123659-apt43ga90b-apt43ga90s-datasheet Description: IGBT 900V 78A 337W TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 25A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 875µJ (on), 425µJ (off)
Test Condition: 600V, 25A, 4.7Ohm, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 129 A
Power - Max: 337 W
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APT43GA90B Hersteller : Microchip Technology APT43GA90B_S_D-1592706.pdf IGBT Transistors FG, IGBT, 900V, TO-247
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