APT43GA90BD30 Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT 900V 78A 337W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 875µJ (on), 425µJ (off)
Test Condition: 600V, 25A, 4.7Ohm, 15V
Gate Charge: 116 nC
Part Status: Active
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 129 A
Power - Max: 337 W
auf Bestellung 164 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 14.84 EUR |
| 100+ | 13.6 EUR |
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Technische Details APT43GA90BD30 Microchip Technology
Description: IGBT 900V 78A 337W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 47A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 12ns/82ns, Switching Energy: 875µJ (on), 425µJ (off), Test Condition: 600V, 25A, 4.7Ohm, 15V, Gate Charge: 116 nC, Part Status: Active, Current - Collector (Ic) (Max): 78 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 129 A, Power - Max: 337 W.
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Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 43A; 337W; TO247-3 Mounting: THT Case: TO247-3 Gate charge: 116nC Collector-emitter voltage: 900V Collector current: 43A Gate-emitter voltage: ±30V Pulsed collector current: 129A Turn-on time: 28ns Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Power dissipation: 337W Turn-off time: 246ns Type of transistor: IGBT |
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