APT44GA60B Microsemi
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Technische Details APT44GA60B Microsemi
Description: IGBT 600V 78A 337W TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 16ns/84ns, Switching Energy: 409µJ (on), 258µJ (off), Test Condition: 400V, 26A, 4.7Ohm, 15V, Gate Charge: 128 nC, Current - Collector (Ic) (Max): 78 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 130 A, Power - Max: 337 W.
Weitere Produktangebote APT44GA60B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| APT44GA60B | Hersteller : MICROCHIP (MICROSEMI) |
 APT44GA60B THT IGBT transistors |
Produkt ist nicht verfügbar |
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APT44GA60B | Hersteller : Microchip Technology |
Description: IGBT 600V 78A 337W TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 26A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 16ns/84ns Switching Energy: 409µJ (on), 258µJ (off) Test Condition: 400V, 26A, 4.7Ohm, 15V Gate Charge: 128 nC Current - Collector (Ic) (Max): 78 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 130 A Power - Max: 337 W |
Produkt ist nicht verfügbar |