APT47GA60JD40 MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B
Case: SOT227B
Pulsed collector current: 139A
Collector current: 47A
Gate-emitter voltage: ±30V
Semiconductor structure: single transistor
Technology: POWER MOS 8®; PT
Max. off-state voltage: 0.6kV
Application: for UPS
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
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Technische Details APT47GA60JD40 MICROCHIP (MICROSEMI)
Description: IGBT 600V 87A 283W SOT-227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 87 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 283 W, Current - Collector Cutoff (Max): 275 µA, Input Capacitance (Cies) @ Vce: 6.32 nF @ 25 V.
Weitere Produktangebote APT47GA60JD40
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT47GA60JD40 | Hersteller : Microchip Technology |
Description: IGBT 600V 87A 283W SOT-227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 47A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 87 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 283 W Current - Collector Cutoff (Max): 275 µA Input Capacitance (Cies) @ Vce: 6.32 nF @ 25 V |
Produkt ist nicht verfügbar |
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APT47GA60JD40 | Hersteller : Microchip Technology |
IGBT Modules IGBT PT MOS 8 Combi 600 V 47 A ISOTOP |
Produkt ist nicht verfügbar |
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| APT47GA60JD40 | Hersteller : MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 47A; SOT227B Case: SOT227B Pulsed collector current: 139A Collector current: 47A Gate-emitter voltage: ±30V Semiconductor structure: single transistor Technology: POWER MOS 8®; PT Max. off-state voltage: 0.6kV Application: for UPS Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |