APT47N60BC3G MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 25 EUR |
| 4+ | 22.87 EUR |
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Technische Details APT47N60BC3G MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 600V 47A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 2.7mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V.
Weitere Produktangebote APT47N60BC3G nach Preis ab 22.87 EUR bis 32.42 EUR
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APT47N60BC3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 260nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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APT47N60BC3G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 600V 47A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V |
auf Bestellung 35 Stücke: Lieferzeit 21-28 Tag (e) |
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APT47N60BC3G | Hersteller : Microchip Technology |
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247 Tube |
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APT47N60BC3G | Hersteller : Microchip Technology |
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| APT47N60BC3G | Hersteller : MICROSEMI |
TO 247/MOSFET N-CH 47A 600V APT47N Anzahl je Verpackung: 30 Stücke |
Produkt ist nicht verfügbar |
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APT47N60BC3G | Hersteller : Microchip Technology |
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