APT47N60SC3G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 600V 47A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 22.53 EUR |
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Technische Details APT47N60SC3G Microchip Technology
Description: MOSFET N-CH 600V 47A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 2.7mA, Supplier Device Package: D3Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V.
Weitere Produktangebote APT47N60SC3G nach Preis ab 20.57 EUR bis 23.83 EUR
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APT47N60SC3G | Hersteller : Microchip Technology |
MOSFETs MOSFET COOLMOS 600 V 47 A TO-268 |
auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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APT47N60SC3G | Hersteller : Microchip Technology |
Trans MOSFET N-CH 600V 47A 3-Pin(2+Tab) D3PAK Tube |
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APT47N60SC3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 141A Power dissipation: 417W Case: D3PAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 260nC Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT47N60SC3G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; D3PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 141A Power dissipation: 417W Case: D3PAK Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 260nC Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ |
Produkt ist nicht verfügbar |