APT4M120K MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 15A
Power dissipation: 225W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.8Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 15A
Power dissipation: 225W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.8Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 159 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 3.79 EUR |
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Technische Details APT4M120K MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 1200V 5A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V, Power Dissipation (Max): 225W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220 [K], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V.
Weitere Produktangebote APT4M120K nach Preis ab 3.79 EUR bis 6.18 EUR
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APT4M120K | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; Idm: 15A; 225W; TO220-3 Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Pulsed drain current: 15A Power dissipation: 225W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 3.8Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 159 Stücke: Lieferzeit 7-14 Tag (e) |
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APT4M120K | Hersteller : Microchip Technology |
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auf Bestellung 871 Stücke: Lieferzeit 10-14 Tag (e) |
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APT4M120K | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 1.2KV 5A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 159 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 2200 Stücke: Lieferzeit 18-25 Tag (e) |
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APT4M120K | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 1.2KV 5A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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APT4M120K | Hersteller : Microchip Technology |
Trans MOSFET N-CH Si 1.2KV 5A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| APT4M120K | Hersteller : MICROSEMI |
TO220/N-CHANNEL POWER MOSFET - MOS8 APT4M120 Anzahl je Verpackung: 50 Stücke |
Produkt ist nicht verfügbar |
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APT4M120K | Hersteller : Microchip Technology |
Description: MOSFET N-CH 1200V 5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 2A, 10V Power Dissipation (Max): 225W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220 [K] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 25 V |
Produkt ist nicht verfügbar |