APT5018BFLLG Microchip Technology
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Technische Details APT5018BFLLG Microchip Technology
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3, Type of transistor: N-MOSFET, Power dissipation: 300W, Polarisation: unipolar, Case: TO247-3, Kind of package: tube, Mounting: THT, Gate charge: 58nC, Technology: POWER MOS 7®, Kind of channel: enhancement, Gate-source voltage: ±30V, Drain-source voltage: 500V, Pulsed drain current: 108A, Drain current: 27A, On-state resistance: 0.18Ω, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT5018BFLLG
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APT5018BFLLG | Hersteller : MICROCHIP TECHNOLOGY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3 Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Case: TO247-3 Kind of package: tube Mounting: THT Gate charge: 58nC Technology: POWER MOS 7® Kind of channel: enhancement Gate-source voltage: ±30V Drain-source voltage: 500V Pulsed drain current: 108A Drain current: 27A On-state resistance: 0.18Ω Anzahl je Verpackung: 1 Stücke |
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APT5018BFLLG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 500V 27A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V |
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APT5018BFLLG | Hersteller : Microchip Technology |
MOSFETs FREDFET MOS7 500 V 18 Ohm TO-247 |
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APT5018BFLLG | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3 Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Case: TO247-3 Kind of package: tube Mounting: THT Gate charge: 58nC Technology: POWER MOS 7® Kind of channel: enhancement Gate-source voltage: ±30V Drain-source voltage: 500V Pulsed drain current: 108A Drain current: 27A On-state resistance: 0.18Ω |
Produkt ist nicht verfügbar |