APT5018BLLG Microchip Technology
auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 16.24 EUR |
| 100+ | 14.03 EUR |
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Technische Details APT5018BLLG Microchip Technology
Description: MOSFET N-CH 500V 27A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V.
Weitere Produktangebote APT5018BLLG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT5018BLLG | Hersteller : MICROCHIP TECHNOLOGY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3 Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Case: TO247-3 Kind of package: tube Mounting: THT Gate charge: 58nC Technology: POWER MOS 7® Kind of channel: enhancement Gate-source voltage: ±30V Drain-source voltage: 500V Pulsed drain current: 108A Drain current: 27A On-state resistance: 0.18Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5018BLLG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 500V 27A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT5018BLLG | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3 Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Case: TO247-3 Kind of package: tube Mounting: THT Gate charge: 58nC Technology: POWER MOS 7® Kind of channel: enhancement Gate-source voltage: ±30V Drain-source voltage: 500V Pulsed drain current: 108A Drain current: 27A On-state resistance: 0.18Ω |
Produkt ist nicht verfügbar |