APT5018SLLG MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Case: D3PAK
Kind of package: tube
Mounting: SMD
Gate charge: 58nC
Technology: POWER MOS 7®
Kind of channel: enhancement
Gate-source voltage: ±30V
Drain-source voltage: 500V
Pulsed drain current: 108A
Drain current: 27A
On-state resistance: 0.18Ω
Anzahl je Verpackung: 1 Stücke
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Technische Details APT5018SLLG MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 500V 27A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: D3Pak, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V.
Weitere Produktangebote APT5018SLLG
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APT5018SLLG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 500V 27A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V |
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APT5018SLLG | Hersteller : Microchip Technology |
MOSFETs MOSFET MOS7 500 V 18 Ohm TO-268 |
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APT5018SLLG | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Case: D3PAK Kind of package: tube Mounting: SMD Gate charge: 58nC Technology: POWER MOS 7® Kind of channel: enhancement Gate-source voltage: ±30V Drain-source voltage: 500V Pulsed drain current: 108A Drain current: 27A On-state resistance: 0.18Ω |
Produkt ist nicht verfügbar |