
APT50GF120JRD Microchip Technology
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
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1+ | 77.33 EUR |
100+ | 66.79 EUR |
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Technische Details APT50GF120JRD Microchip Technology
Description: IGBT NPT COMBI 1200V 50A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: SOT-227 (ISOTOP®), Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 460 W, Current - Collector Cutoff (Max): 750 µA, Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V.
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Foto | Bezeichnung | Hersteller | Beschreibung |
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APT50GF120JRD | Hersteller : MICROCHIP TECHNOLOGY | APT50GF120JRD IGBT modules |
Produkt ist nicht verfügbar |
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APT50GF120JRD | Hersteller : Microchip Technology |
Description: IGBT NPT COMBI 1200V 50A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SOT-227 (ISOTOP®) Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 460 W Current - Collector Cutoff (Max): 750 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
Produkt ist nicht verfügbar |