APT50GF120JRD Microchip Technology
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 79.90 EUR |
| 500+ | 69.03 EUR |
| 1000+ | 67.44 EUR |
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Technische Details APT50GF120JRD Microchip Technology
Description: IGBT NPT COMBI 1200V 50A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: SOT-227 (ISOTOP®), Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 460 W, Current - Collector Cutoff (Max): 750 µA, Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V.
Weitere Produktangebote APT50GF120JRD
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APT50GF120JRD | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 64A; SOT227B Type of module: IGBT Case: SOT227B Max. off-state voltage: 1.2kV Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: NPT Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 64A Pulsed collector current: 225A Anzahl je Verpackung: 1 Stücke |
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APT50GF120JRD | Hersteller : Microchip Technology |
Description: IGBT NPT COMBI 1200V 50A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 50A NTC Thermistor: No Supplier Device Package: SOT-227 (ISOTOP®) Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 460 W Current - Collector Cutoff (Max): 750 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
Produkt ist nicht verfügbar |
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| APT50GF120JRD | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 64A; SOT227B Type of module: IGBT Case: SOT227B Max. off-state voltage: 1.2kV Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: NPT Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 64A Pulsed collector current: 225A |
Produkt ist nicht verfügbar |