APT50GF120JRDQ3 MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 64A; SOT227B
Type of module: IGBT
Case: SOT227B
Max. off-state voltage: 1.2kV
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Technology: Fast IGBT; FRED; NPT
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 64A
Pulsed collector current: 225A
Anzahl je Verpackung: 1 Stücke
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Technische Details APT50GF120JRDQ3 MICROCHIP TECHNOLOGY
Description: IGBT MOD 1200V 120A 521W ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: ISOTOP®, IGBT Type: NPT, Current - Collector (Ic) (Max): 120 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 521 W, Current - Collector Cutoff (Max): 750 µA, Input Capacitance (Cies) @ Vce: 5.32 nF @ 25 V.
Weitere Produktangebote APT50GF120JRDQ3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT50GF120JRDQ3 | Hersteller : Microchip Technology |
Description: IGBT MOD 1200V 120A 521W ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 75A NTC Thermistor: No Supplier Device Package: ISOTOP® IGBT Type: NPT Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 521 W Current - Collector Cutoff (Max): 750 µA Input Capacitance (Cies) @ Vce: 5.32 nF @ 25 V |
Produkt ist nicht verfügbar |
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APT50GF120JRDQ3 | Hersteller : Microchip Technology |
IGBT Modules IGBT NPT Low Frequency Combi 1200 V 50 A SOT-227 |
Produkt ist nicht verfügbar |
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| APT50GF120JRDQ3 | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 64A; SOT227B Type of module: IGBT Case: SOT227B Max. off-state voltage: 1.2kV Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: Fast IGBT; FRED; NPT Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 64A Pulsed collector current: 225A |
Produkt ist nicht verfügbar |