APT50GS60BRDQ2G Microchip Technology
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 17.37 EUR |
| 10+ | 15.68 EUR |
| 25+ | 14.96 EUR |
| 50+ | 14.48 EUR |
| 100+ | 12.39 EUR |
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Technische Details APT50GS60BRDQ2G Microchip Technology
Description: IGBT NPT 600V 93A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A, Supplier Device Package: TO-247 [B], IGBT Type: NPT, Td (on/off) @ 25°C: 16ns/225ns, Switching Energy: 755µJ (off), Test Condition: 400V, 40A, 4.7Ohm, 15V, Gate Charge: 235 nC, Part Status: Active, Current - Collector (Ic) (Max): 93 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 195 A, Power - Max: 415 W.
Weitere Produktangebote APT50GS60BRDQ2G nach Preis ab 24.36 EUR bis 24.36 EUR
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APT50GS60BRDQ2G | Hersteller : Microchip Technology |
 Description: IGBT NPT 600V 93A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A Supplier Device Package: TO-247 [B] IGBT Type: NPT Td (on/off) @ 25°C: 16ns/225ns Switching Energy: 755µJ (off) Test Condition: 400V, 40A, 4.7Ohm, 15V Gate Charge: 235 nC Part Status: Active Current - Collector (Ic) (Max): 93 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 195 A Power - Max: 415 W |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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| APT50GS60BRDQ2G | Hersteller : MICROSEMI |
TO247/INSULATED GATE BIPOLAR TRANSISTOR - NPT LOW FREQUENCY - COMBI APT50GS60 Anzahl je Verpackung: 1 Stücke |
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