APT50GT60BRDQ2G Microchip / Microsemi
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Technische Details APT50GT60BRDQ2G Microchip / Microsemi
Description: IGBT NPT 600V 110A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 22 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A, Supplier Device Package: TO-247 [B], IGBT Type: NPT, Td (on/off) @ 25°C: 14ns/240ns, Switching Energy: 995µJ (on), 1070µJ (off), Test Condition: 400V, 50A, 5Ohm, 15V, Gate Charge: 240 nC, Current - Collector (Ic) (Max): 110 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 446 W.
Weitere Produktangebote APT50GT60BRDQ2G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| APT50GT60BRDQ2G | Hersteller : MICROSEMI |
 TO247/INSULATED GATE BIPOLAR TRANSISTOR - NPT MED FREQUENCY COMBI APT50GT60Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT50GT60BRDQ2G | Hersteller : Microchip Technology |
Description: IGBT NPT 600V 110A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 22 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Supplier Device Package: TO-247 [B] IGBT Type: NPT Td (on/off) @ 25°C: 14ns/240ns Switching Energy: 995µJ (on), 1070µJ (off) Test Condition: 400V, 50A, 5Ohm, 15V Gate Charge: 240 nC Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 446 W |
Produkt ist nicht verfügbar |