APT50GT60BRG Microchip / Microsemi


APT50GT60B_SR(G)_D-1594051.pdf Hersteller: Microchip / Microsemi
IGBT Transistors FG, IGBT, 600V, TO-247, RoHS
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Technische Details APT50GT60BRG Microchip / Microsemi

Description: IGBT NPT 600V 110A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A, Supplier Device Package: TO-247 [B], IGBT Type: NPT, Td (on/off) @ 25°C: 14ns/240ns, Switching Energy: 995µJ (on), 1070µJ (off), Test Condition: 400V, 50A, 4.3Ohm, 15V, Gate Charge: 240 nC, Current - Collector (Ic) (Max): 110 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 446 W.

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APT50GT60BRG APT50GT60BRG Hersteller : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT NPT 600V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 14ns/240ns
Switching Energy: 995µJ (on), 1070µJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 446 W
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