APT53F80J Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 57A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
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Technische Details APT53F80J Microchip Technology
Description: MOSFET N-CH 800V 57A ISOTOP, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 5mA, Supplier Device Package: ISOTOP®, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V.
Weitere Produktangebote APT53F80J nach Preis ab 98.81 EUR bis 114.44 EUR
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APT53F80J | Hersteller : Microchip Technology |
Discrete Semiconductor Modules FG, FREDFET, 800V, SOT-227 |
auf Bestellung 145 Stücke: Lieferzeit 10-14 Tag (e) |
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| APT53F80J | Hersteller : MICROSEMI |
ISOTOP-4/53 A, 800 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET APT53F80 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT53F80J | Hersteller : MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 36A; ISOTOP; screw; Idm: 325A; 960W Case: ISOTOP Technology: POWER MOS 8® Electrical mounting: screw Mechanical mounting: screw Polarisation: unipolar Kind of channel: enhancement Semiconductor structure: single transistor On-state resistance: 0.11Ω Type of semiconductor module: MOSFET transistor Kind of package: tube Gate-source voltage: ±30V Drain current: 36A Pulsed drain current: 325A Drain-source voltage: 800V Power dissipation: 960W |
Produkt ist nicht verfügbar |