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APT56M60B2

APT56M60B2 Microchip / Microsemi

High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microchip / Microsemi
MOSFET FG, MOSFET, 600V, TO-247 T-MAX
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Technische Details APT56M60B2 Microchip / Microsemi

Description: MOSFET N-CH 600V 60A TO247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-247 [B], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V.

Weitere Produktangebote APT56M60B2

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APT56M60B2 APT56M60B2 Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
APT56M60B2 APT56M60B2 Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf MOSFET MOSFET MOS8 600 V 56 A TO-247 MAX
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
APT56M60B2 High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT56M60B2
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 [B]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
APT56M60B2 High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT56M60B2
Hersteller: Microchip Technology
MOSFET MOSFET MOS8 600 V 56 A TO-247 MAX
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH