APT6029BLLG Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 600V 21A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2615 pF @ 25 V
auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.89 EUR |
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Technische Details APT6029BLLG Microchip Technology
Description: MOSFET N-CH 600V 21A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 10.5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2615 pF @ 25 V.
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