APT64GA90B2D30 Microchip Technology

Description: IGBT PT 900V 117A TO247, Power - Max: 500 W, Current - Collector Pulsed (Icm): 193 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector (Ic) (Max): 117 A, Part Status: Active, Gate Charge: 162 nC, Test Condition: 600V, 38A, 4.7Ohm, 15V, Switching Energy: 1192µJ (on), 1088µJ (off), Td (on/off) @ 25°C: 18ns/131ns, IGBT Type: PT, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.