APT64GA90B2D30 Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT 900V 117A 500W TO-247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/131ns
Switching Energy: 1192µJ (on), 1088µJ (off)
Test Condition: 600V, 38A, 4.7Ohm, 15V
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 117 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 193 A
Power - Max: 500 W
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 31.64 EUR |
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Technische Details APT64GA90B2D30 Microchip Technology
Description: IGBT 900V 117A 500W TO-247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 38A, IGBT Type: PT, Td (on/off) @ 25°C: 18ns/131ns, Switching Energy: 1192µJ (on), 1088µJ (off), Test Condition: 600V, 38A, 4.7Ohm, 15V, Gate Charge: 162 nC, Part Status: Active, Current - Collector (Ic) (Max): 117 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 193 A, Power - Max: 500 W.
Weitere Produktangebote APT64GA90B2D30 nach Preis ab 29.07 EUR bis 31.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APT64GA90B2D30 | Hersteller : Microchip Technology |
IGBT Transistors FG, IGBT-COMBI, 900V, TO-247 T-MAX |
auf Bestellung 3 Stücke: Lieferzeit 14-28 Tag (e) |
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APT64GA90B2D30 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 64A; 500W; T-Max Mounting: THT Case: T-Max Gate charge: 162nC Collector-emitter voltage: 900V Collector current: 64A Gate-emitter voltage: ±30V Pulsed collector current: 193A Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Turn-on time: 44ns Turn-off time: 352ns Power dissipation: 500W Type of transistor: IGBT |
Produkt ist nicht verfügbar |
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| APT64GA90B2D30 | Hersteller : MICROSEMI |
TO247/INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 8 - COMBI APT64GA90B2 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT64GA90B2D30 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 900V; 64A; 500W; T-Max Mounting: THT Case: T-Max Gate charge: 162nC Collector-emitter voltage: 900V Collector current: 64A Gate-emitter voltage: ±30V Pulsed collector current: 193A Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Turn-on time: 44ns Turn-off time: 352ns Power dissipation: 500W Type of transistor: IGBT |
Produkt ist nicht verfügbar |