APT65GP60B2G Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT 600V 100A 833W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/91ns
Switching Energy: 605µJ (on), 896µJ (off)
Test Condition: 400V, 65A, 5Ohm, 15V
Gate Charge: 210 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 833 W
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 29.06 EUR |
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Technische Details APT65GP60B2G Microchip Technology
Description: IGBT 600V 100A 833W TMAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A, IGBT Type: PT, Td (on/off) @ 25°C: 30ns/91ns, Switching Energy: 605µJ (on), 896µJ (off), Test Condition: 400V, 65A, 5Ohm, 15V, Gate Charge: 210 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 250 A, Power - Max: 833 W.
Weitere Produktangebote APT65GP60B2G nach Preis ab 38.22 EUR bis 44.25 EUR
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APT65GP60B2G | Hersteller : Microchip Technology |
IGBT Transistors FG, IGBT, 600V, 65A, TO-247 T-MAX, RoHS |
auf Bestellung 9 Stücke: Lieferzeit 14-28 Tag (e) |
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APT65GP60B2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 96A; 833W; T-Max Mounting: THT Kind of package: tube Case: T-Max Gate charge: 0.21µC Technology: POWER MOS 7®; PT Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 96A Pulsed collector current: 250A Turn-on time: 84ns Turn-off time: 219ns Type of transistor: IGBT Power dissipation: 833W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT65GP60B2G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 96A; 833W; T-Max Mounting: THT Kind of package: tube Case: T-Max Gate charge: 0.21µC Technology: POWER MOS 7®; PT Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 96A Pulsed collector current: 250A Turn-on time: 84ns Turn-off time: 219ns Type of transistor: IGBT Power dissipation: 833W |
Produkt ist nicht verfügbar |