APT65GP60B2G Microchip Technology
Hersteller: Microchip Technology
Description: IGBT PT 600V 100A
Current - Collector Pulsed (Icm): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
Gate Charge: 210 nC
Test Condition: 400V, 65A, 5Ohm, 15V
Switching Energy: 605µJ (on), 896µJ (off)
Td (on/off) @ 25°C: 30ns/91ns
IGBT Type: PT
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 833 W
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Technische Details APT65GP60B2G Microchip Technology
Description: IGBT PT 600V 100A, Current - Collector Pulsed (Icm): 250 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 100 A, Part Status: Active, Gate Charge: 210 nC, Test Condition: 400V, 65A, 5Ohm, 15V, Switching Energy: 605µJ (on), 896µJ (off), Td (on/off) @ 25°C: 30ns/91ns, IGBT Type: PT, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube, Power - Max: 833 W.
Weitere Produktangebote APT65GP60B2G nach Preis ab 23.67 EUR bis 27.4 EUR
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APT65GP60B2G | Microchip Technology |
IGBTs IGBT PT MOS 7 Single 600 V 65 A TO-247 MAX |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| APT65GP60B2G |
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Hersteller: Microchip Technology
IGBTs IGBT PT MOS 7 Single 600 V 65 A TO-247 MAX
IGBTs IGBT PT MOS 7 Single 600 V 65 A TO-247 MAX
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 27.4 EUR |
| 100+ | 23.67 EUR |