Technische Details APT66F60B2 Microsemi
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W, Case: TO247MAX, Mounting: THT, Power dissipation: 1135W, Polarisation: unipolar, Gate charge: 330nC, Technology: POWER MOS 8®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 245A, Drain-source voltage: 600V, Drain current: 44A, On-state resistance: 90mΩ, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT66F60B2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APT66F60B2 | Hersteller : MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W Case: TO247MAX Mounting: THT Power dissipation: 1135W Polarisation: unipolar Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A Drain-source voltage: 600V Drain current: 44A On-state resistance: 90mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT66F60B2 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 600V 70A T-MAX |
Produkt ist nicht verfügbar |
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APT66F60B2 | Hersteller : Microchip Technology |
MOSFET FREDFET MOS8 600 V 66 A TO-247 MAX |
Produkt ist nicht verfügbar |
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| APT66F60B2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 44A; Idm: 245A; 1135W Case: TO247MAX Mounting: THT Power dissipation: 1135W Polarisation: unipolar Gate charge: 330nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 245A Drain-source voltage: 600V Drain current: 44A On-state resistance: 90mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |