APT68GA60B2D40 MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 68A; 520W; T-Max
Mounting: THT
Gate charge: 198nC
Collector-emitter voltage: 600V
Collector current: 68A
Gate-emitter voltage: ±30V
Pulsed collector current: 202A
Case: T-Max
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 8®; PT
Turn-on time: 46ns
Turn-off time: 304ns
Power dissipation: 520W
Type of transistor: IGBT
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Technische Details APT68GA60B2D40 MICROCHIP (MICROSEMI)
Category: THT IGBT transistors, Description: Transistor: IGBT; PT; 600V; 68A; 520W; T-Max, Mounting: THT, Gate charge: 198nC, Collector-emitter voltage: 600V, Collector current: 68A, Gate-emitter voltage: ±30V, Pulsed collector current: 202A, Case: T-Max, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode, Technology: POWER MOS 8®; PT, Turn-on time: 46ns, Turn-off time: 304ns, Power dissipation: 520W, Type of transistor: IGBT.
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APT68GA60B2D40 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 68A; 520W; T-Max Mounting: THT Gate charge: 198nC Collector-emitter voltage: 600V Collector current: 68A Gate-emitter voltage: ±30V Pulsed collector current: 202A Case: T-Max Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 8®; PT Turn-on time: 46ns Turn-off time: 304ns Power dissipation: 520W Type of transistor: IGBT |
Produkt ist nicht verfügbar |