APT70GR120JD60 Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT MOD 1200V 112A 543W SOT227
Packaging: Tube
Package / Case: SOT-227-4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: NPT
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 543 W
Current - Collector Cutoff (Max): 1.1 mA
Input Capacitance (Cies) @ Vce: 7.26 nF @ 25 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 62.88 EUR |
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Technische Details APT70GR120JD60 Microchip Technology
Description: IGBT MOD 1200V 112A 543W SOT227, Packaging: Tube, Package / Case: SOT-227-4, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 70A, NTC Thermistor: No, Supplier Device Package: SOT-227, IGBT Type: NPT, Current - Collector (Ic) (Max): 112 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 543 W, Current - Collector Cutoff (Max): 1.1 mA, Input Capacitance (Cies) @ Vce: 7.26 nF @ 25 V.
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Preis |
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APT70GR120JD60 | Hersteller : Microchip Technology |
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| APT70GR120JD60 | Hersteller : Microchip Technology |
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| APT70GR120JD60 | Hersteller : MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 70A Pulsed collector current: 280A Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Type of semiconductor module: IGBT Case: SOT227B |
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