APT8014L2LLG Microchip Technology
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Technische Details APT8014L2LLG Microchip Technology
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX, Type of transistor: N-MOSFET, Technology: POWER MOS 7®, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 52A, Pulsed drain current: 208A, Power dissipation: 893W, Case: TO264MAX, Gate-source voltage: ±30V, On-state resistance: 0.14Ω, Mounting: THT, Gate charge: 285nC, Kind of package: tube, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT8014L2LLG
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APT8014L2LLG | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 800V 52A 3-Pin(3+Tab) TO-264 MAX Tube |
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| APT8014L2LLG | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 800V Drain current: 52A Pulsed drain current: 208A Power dissipation: 893W Case: TO264MAX Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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APT8014L2LLG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 800V 52A 264 MAX Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: 264 MAX™ [L2] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7238 pF @ 25 V |
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APT8014L2LLG | Hersteller : Microchip Technology |
MOSFETs MOSFET MOS7 800 V 14 Ohm TO-264 MAX |
Produkt ist nicht verfügbar |
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| APT8014L2LLG | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 52A; Idm: 208A; 893W; TO264MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 800V Drain current: 52A Pulsed drain current: 208A Power dissipation: 893W Case: TO264MAX Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |