APT8020B2LLG MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; T-Max
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 38A
Power dissipation: 694W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details APT8020B2LLG MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 800V 38A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 19A, 10V, Power Dissipation (Max): 694W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V.
Weitere Produktangebote APT8020B2LLG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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APT8020B2LLG | Hersteller : Microchip Technology |
Trans MOSFET N-CH 800V 38A 3-Pin(3+Tab) T-MAX Tube |
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| APT8020B2LLG | Hersteller : MICROSEMI |
T-MAX/38 A, 800 V, 0.2 ohm, N-CHANNEL, Si, POWER,MOSFET APT8020 Anzahl je Verpackung: 1 Stücke |
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APT8020B2LLG | Hersteller : Microchip Technology |
Description: MOSFET N-CH 800V 38A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 19A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT8020B2LLG | Hersteller : Microchip Technology |
MOSFETs MOSFET MOS7 800 V 20 Ohm TO-247 MAX |
Produkt ist nicht verfügbar |
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| APT8020B2LLG | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 38A; 694W; T-Max Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 800V Drain current: 38A Power dissipation: 694W Case: T-Max Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |