APT8056BVRG Microchip Technology
| Anzahl | Preis |
|---|---|
| 1+ | 22.53 EUR |
| 10+ | 21.74 EUR |
| 25+ | 20.86 EUR |
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Technische Details APT8056BVRG Microchip Technology
Description: MOSFET N-CH 800V 16A TO247, Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Supplier Device Package: TO-247 [B], Vgs(th) (Max) @ Id: 4V @ 1mA, Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote APT8056BVRG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| APT8056BVRG | MICROSEMI |
 TO247/POWER MOSFET - MOS5 APT8056Anzahl je Verpackung: 30 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
APT8056BVRG | Microchip Technology |
Description: MOSFET N-CH 800V 16A TO247 Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Supplier Device Package: TO-247 [B] Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 40 Stücke Im Einkaufswagen Stück im Wert von UAH |
| APT8056BVRG |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 16A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 800V 16A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen
Stück im Wert von UAH