
APT8056BVRG Microchip Technology
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
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1+ | 23.95 EUR |
100+ | 20.7 EUR |
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Technische Details APT8056BVRG Microchip Technology
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A, Type of transistor: N-MOSFET, Technology: POWER MOS 5®, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 16A, Pulsed drain current: 64A, Power dissipation: 370W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 0.56Ω, Mounting: THT, Gate charge: 275nC, Kind of package: tube, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT8056BVRG
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APT8056BVRG | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APT8056BVRG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 16A Pulsed drain current: 64A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Gate charge: 275nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT8056BVRG | Hersteller : MICROSEMI |
![]() Anzahl je Verpackung: 30 Stücke |
Produkt ist nicht verfügbar |
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APT8056BVRG | Hersteller : Microchip Technology |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247 [B] Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT8056BVRG | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 800V; 16A; Idm: 64A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 800V Drain current: 16A Pulsed drain current: 64A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Gate charge: 275nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |